Modeling of the transient enhanced diffusion of boron implanted into preamorphized silicon:: the case of BF2+ implantation

被引：5
|
作者：
Dusch, A [1 ]
Marcon, J
Masmoudi, K
Olivié, F
Benzohra, M
Ketata, K
Ketata, M
机构：
[1] Univ Rouen, IUT, LEMI, F-76821 Mont St Aignan, France
[2] CNRS, LAAS, F-31077 Toulouse, France
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 80卷 / 1-3期
关键词：
implantation; difussion; preamorphized;
D O I：
10.1016/S0921-5107(00)00590-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have simulated transient enhanced diffusion (TED) in the presence of end-of-range (EOR) defects produced by Ge amorphization followed by BF2+ implantation. Ostwald ripening of EOR defects has been taken into account. A comparison of annealed profiles with equivalent B+ implantation shows that the existing models are not sufficient to simulate the BF2+ experimental profiles where the boron diffusion depth is very low. We have proposed that the presence of fluorine can act as sinks for interstial boron and, hence, reduces the boron diffusion depth in order to obtain a good approximation of experimental profiles. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：65 / 67
页数：3
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