RAPID THERMAL ANNEALING OF BF2+ IMPLANTED, PREAMORPHIZED SILICON

被引：66
|
作者：
SEIDEL, TE
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 10期
关键词：
D O I：
10.1109/EDL.1983.25760
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：353 / 355
页数：3
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