FLUORINE BEHAVIOR IN BF2+ IMPLANTED POLYSILICON FILMS SUBJECTED TO RAPID THERMAL ANNEALING

被引：0
|
作者：
林成鲁
倪如山
邹世昌
机构：
[1] Ion Beam Laboratory Shanghai Institute of Metallurgy
[2] Academia Sinica
来源：
Journal of Electronics(China) | 1990年 / 02期
关键词：
Ion implantation; Rapid thermal annealing; Fluorine bubble;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The physical and electrical properties of BFimplanted polysilicon films subjectedto rapid thermal annealing（RTA）are presented.It is found that the out diffusion of F and itssegregation at polysilicon/silicon oxide interface during RTA are the major causes of F anomalousmigration.Fluorine bubbles were observed in BFimplanted samples at doses of 1×10and5×10cmafter RTA.
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页码：190 / 193
页数：4
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