ON THE ROLE OF FLUORINE IN BF2+ IMPLANTED SILICON

被引：9

作者：

VIRDI, GS ^{[1
]}

RAUTHAN, CMS ^{[1
]}

PATHAK, BC ^{[1
]}

KHOKLE, WS ^{[1
]}

GUPTA, SK ^{[1
]}

LAL, K ^{[1
]}

机构：

[1] NATL PHYS LAB,DOE,CTR CHARACTERIZAT MAT ELECTR,NEW DELHI 110055,INDIA

来源：

SOLID-STATE ELECTRONICS | 1992年 / 35卷 / 04期

关键词：

D O I：

10.1016/0038-1101(92)90117-U

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The role of fluorine atoms on the transformation of surface Si into an amorphous layer after the implantation of molecular BF2 ions has been investigated by the electron spin resonance (EPR) technique. The critical dose of BF2 ions necessary to amorphize the Si at a particular energy is determined experimentally from EPR data analysis. The results reveal that in the ion energy range of 25-150 keV, the critical dose required for BF2 ions was much lower (less-than-or-equal-to 2.5 x 10(15) ions cm-2) than compared to the critical dose for B+. The additional damage produced by heavy fluorine atoms, split from BF2 ions, is found responsible for providing the necessary level of amorphization. As an application of BF2+ implantation, shallow p+ -n junctions with junction depth and sheet resistivity as low as 0.20-mu-m and 100-OMEGA square-1, respectively, were fabricated by two-step annealing.

引用

页码：535 / 540

页数：6

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