NEAR-SURFACE DEFECTS FORMED DURING RAPID THERMAL ANNEALING OF PREAMORPHIZED AND BF2+-IMPLANTED SILICON

被引：28

作者：

SANDS, T

WASHBURN, J

GRONSKY, R

MASZARA, W

SADANA, DK

ROZGONYI, GA

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT ENGN,RALEIGH,NC 27650

[2] N CAROLINA STATE UNIV,DEPT MAT ENGN,RALEIGH,NC 27650

[3] MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC 27709

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 09期

关键词：

D O I：

10.1063/1.95446

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：982 / 984

页数：3

共 50 条

[1] RAPID THERMAL ANNEALING OF BF2+ IMPLANTED, PREAMORPHIZED SILICON
SEIDEL, TE
[J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) : 353 - 355
[2] POSTIMPLANT ANNEALING EFFECT ON BF2+-IMPLANTED JUNCTIONS INTO PREAMORPHIZED SILICON
DEBONI, M
TANDON, P
KHAN, M
BATRA, T
PANCHOLY, R
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : C357 - C357
[3] RAPID THERMAL ANNEALING CHARACTERISTICS OF AS+-IMPLANTED AND BF2+-IMPLANTED SI
KWOR, R
KWONG, DL
YEO, YK
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (01) : 77 - 79
[4] FURNACE AND RAPID THERMAL ANNEALING OF P+/N JUNCTIONS IN BF2+-IMPLANTED SILICON
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CHEN, JT
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (10) : 2473 - 2475
[5] RAPID THERMAL ANNEALING OF DOPANTS IMPLANTED INTO PREAMORPHIZED SILICON
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[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) : 683 - 687
[6] CHARACTERIZATION OF MICROSTRUCTURAL DEFECTS IN BF2+-IMPLANTED SILICON
WU, IW
CHEN, LJ
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (08) : 3032 - 3038
[7] RAPID THERMAL ANNEALING (RTA) OF DOPANTS IMPLANTED INTO PREAMORPHIZED SILICON
SEIDEL, TE
KNOELL, R
STEVIE, FA
POLI, G
SCHWARTZ, B
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (03) : C83 - C83
[8] ELECTRICAL CHARACTERISTICS AND CONTACT RESISTANCE OF B+-IMPLANTED AND BF2+-IMPLANTED SILICON DIODES WITH FURNACE AND RAPID THERMAL ANNEALING
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (07) : 1354 - 1357
[9] DEFECTS AND LEAKAGE CURRENTS IN BF2 IMPLANTED PREAMORPHIZED SILICON
BROTHERTON, SD
GOWERS, JP
YOUNG, ND
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AYRES, JR
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) : 3567 - 3575
[10] THE RECRYSTALIZATION OF BF2+-IMPLANTED SILICON BY LIGHT-FLASH ANNEALING
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LU, LR
[J]. SOLID-STATE ELECTRONICS, 1982, 25 (07) : 559 - 563

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