ACTIVATION OF SHALLOW, HIGH-DOSE BF2+ IMPLANTS INTO SILICON BY RAPID THERMAL-PROCESSING

被引：15

|

作者：

POWELL, RA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 10期

关键词：

D O I：

10.1063/1.333818

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2837 / 2843

页数：7

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