SHRINKAGE AND ANNIHILATION OF STACKING-FAULTS IN SILICON

被引：27
|
作者：
SUGITA, Y [1 ]
SHIMIZU, H [1 ]
YOSHINAKA, A [1 ]
AOSHIMA, T [1 ]
机构：
[1] HITACHI LTD,DIV SEMICONDUCTOR & INTEGRATED CIRCUITS,KODAIRO,TOKYO 187,JAPAN
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1977年 / 14卷 / 01期
关键词：
D O I：
10.1116/1.569260
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：44 / 46
页数：3
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