GROWTH OF STACKING-FAULTS AND DISLOCATIONS INDUCED IN SILICON BY PHOSPHORUS PREDEPOSITION

被引：33

作者：

ARMIGLIATO, A ^{[1
]}

SERVIDORI, M ^{[1
]}

SOLMI, S ^{[1
]}

VECCHI, I ^{[1
]}

机构：

[1] CNR,LAMEL LAB,I-40126 BOLOGNA,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 05期

关键词：

D O I：

10.1063/1.323931

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：1806 / 1812

页数：7

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[1] FORMATION OF STACKING-FAULTS AND DISLOCATIONS IN PHOSPHORUS DIFFUSED SILICON
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