CIRCULAR STACKING-FAULTS IN SILICON

被引:23
|
作者
TICE, WK
HUANG, TC
机构
[1] IBM CORP,SYST PROD DIV,ESSEX JUNCTION,UT 05452
[2] IBM CORP,RES DIV,SAN JOSE,CA 95193
关键词
D O I
10.1063/1.1655133
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:157 / 158
页数:2
相关论文
共 50 条
  • [1] CIRCULAR AND HEXAGONAL STACKING-FAULTS IN BULK SILICON CRYSTALS
    DYER, LD
    VOLTMER, FW
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (06) : 812 - 817
  • [2] MODEL FOR FORMATION OF STACKING-FAULTS IN SILICON
    MAHAJAN, S
    ROZGONYI, GA
    BRASEN, D
    [J]. APPLIED PHYSICS LETTERS, 1977, 30 (02) : 73 - 75
  • [3] STACKING-FAULTS IN SILICON EPITAXIAL LAYERS
    AHARONI, H
    [J]. VACUUM, 1976, 26 (4-5) : 167 - 180
  • [4] SHRINKAGE AND ANNIHILATION OF STACKING-FAULTS IN SILICON
    SUGITA, Y
    SHIMIZU, H
    YOSHINAKA, A
    AOSHIMA, T
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 44 - 46
  • [5] ELECTRICALLY ACTIVE STACKING-FAULTS IN SILICON
    MATARE, HF
    RAVI, KV
    VARKER, CJ
    VOLK, CE
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) : 1790 - 1791
  • [6] ELECTRON TRANSMISSION THROUGH SILICON STACKING-FAULTS
    STILES, MD
    HAMANN, DR
    [J]. PHYSICAL REVIEW B, 1990, 41 (08): : 5280 - 5282
  • [7] ELIMINATION OF STACKING-FAULTS IN SILICON BY TRICHLOROETHYLENE OXIDATION
    HATTORI, T
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (06) : 945 - 946
  • [8] THEORETICAL-STUDY OF STACKING-FAULTS IN SILICON
    CHOU, MY
    COHEN, ML
    LOUIE, SG
    [J]. PHYSICAL REVIEW B, 1985, 32 (12): : 7979 - 7987
  • [9] CORE STRUCTURE OF EXTRINSIC STACKING-FAULTS IN SILICON
    KRIVANEK, OL
    MAHER, DM
    [J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 451 - 453
  • [10] ELECTRONIC BEHAVIOR OF DECORATED STACKING-FAULTS IN SILICON
    PEAKER, AR
    HAMILTON, B
    LAHIJI, GR
    TURE, IE
    LORIMER, G
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1989, 4 (1-4): : 123 - 128