共 50 条
- [1] ANNIHILATION OF STACKING-FAULTS IN SILICON BY IMPURITY DIFFUSIONJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (12) : 1899 - 1902HASHIMOTO, HSHIBAYAMA, HMASAKI, HISHIKAWA, H
- [2] ANNIHILATION OF OXIDATION INDUCED STACKING-FAULTS IN SILICONPHILOSOPHICAL MAGAZINE, 1974, 30 (05): : 1081 - 1090RAVI, KV
- [3] COMPARISON BETWEEN THE GROWTH AND SHRINKAGE OF OXIDATION STACKING-FAULTS IN SILICON AND SILICON ON INSULATORJOURNAL OF APPLIED PHYSICS, 1993, 73 (07) : 3246 - 3249TSAMIS, CTSOUKALAS, D
- [5] CIRCULAR STACKING-FAULTS IN SILICONAPPLIED PHYSICS LETTERS, 1974, 24 (04) : 157 - 158TICE, WKHUANG, TC
- [6] A STUDY OF THE GROWTH AND SHRINKAGE OF STACKING-FAULTS IN SIMOXMATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 29 (1-3): : 24 - 28SILVESTRE, GMOORE, RAGARCIA, AASPAR, B
- [7] FORMATION AND ANNIHILATION OF STACKING-FAULTS IN PURE ICEJOURNAL OF PHYSICAL CHEMISTRY, 1983, 87 (21): : 4040 - 4044HONDOH, TITOH, TAMAKAI, SGOTO, KHIGASHI, A
- [8] EFFECTS OF TRICHLOROETHANE ON GENERATION AND ANNIHILATION OF STACKING-FAULTS DURING OXIDATION OF (100) SILICONPHILIPS JOURNAL OF RESEARCH, 1980, 35 (4-5) : 263 - 275LINSSEN, AJPEEK, HL
- [9] IDENTIFICATION, ANNIHILATION, AND SUPPRESSION OF NUCLEATION SITES RESPONSIBLE FOR SILICON EPITAXIAL STACKING-FAULTSJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (12) : 1910 - 1915ROZGONYI, GADEYSHER, RPPEARCE, CW
- [10] IDENTIFICATION, ANNIHILATION, AND SUPPRESSION OF NUCLEATION SITES RESPONSIBLE FOR SILICON EPITAXIAL STACKING-FAULTSJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) : C262 - C262ROZGONYI, GADEYSHER, RPPEARCE, CW