IDENTIFICATION, ANNIHILATION, AND SUPPRESSION OF NUCLEATION SITES RESPONSIBLE FOR SILICON EPITAXIAL STACKING-FAULTS

被引：85
|
作者：
ROZGONYI, GA
DEYSHER, RP
PEARCE, CW
机构：
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
[2] WESTERN ELECT CO INC,ALLENTOWN,PA 18103
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 12期
关键词：
D O I：
10.1149/1.2132722
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：1910 / 1915
页数：6
相关论文
共 50 条
  • [1] IDENTIFICATION, ANNIHILATION, AND SUPPRESSION OF NUCLEATION SITES RESPONSIBLE FOR SILICON EPITAXIAL STACKING-FAULTS
    ROZGONYI, GA
    DEYSHER, RP
    PEARCE, CW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) : C262 - C262
  • [2] SHRINKAGE AND ANNIHILATION OF STACKING-FAULTS IN SILICON
    SUGITA, Y
    SHIMIZU, H
    YOSHINAKA, A
    AOSHIMA, T
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 44 - 46
  • [3] NUCLEATION AND GROWTH OF STACKING-FAULTS IN EPITAXIAL SILICON DURING THERMAL OXIDATION
    HSIEH, CM
    MAHER, DM
    JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 1302 - 1306
  • [4] STACKING-FAULTS IN SILICON EPITAXIAL LAYERS
    AHARONI, H
    VACUUM, 1976, 26 (4-5) : 167 - 180
  • [5] ANNIHILATION OF STACKING-FAULTS IN SILICON BY IMPURITY DIFFUSION
    HASHIMOTO, H
    SHIBAYAMA, H
    MASAKI, H
    ISHIKAWA, H
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (12) : 1899 - 1902
  • [6] ANNIHILATION OF OXIDATION INDUCED STACKING-FAULTS IN SILICON
    RAVI, KV
    PHILOSOPHICAL MAGAZINE, 1974, 30 (05): : 1081 - 1090
  • [7] Formation and annihilation of epitaxial stacking faults generated from pre-existing nucleation sites in silicon
    Cho, CR
    Noh, KY
    Lee, DH
    Kim, YS
    Ko, SW
    Kim, CW
    Kim, DH
    Son, CB
    Kim, SJ
    Cho, DH
    Choi, JJ
    Kim, DJ
    Bae, KM
    Rozgonyi, GA
    HIGH PURITY SILICON VI, 2000, 4218 : 201 - 208
  • [8] SUPPRESSION OF OXIDATION INDUCED STACKING-FAULTS IN SILICON
    HERRING, RG
    JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (04) : 449 - 449
  • [9] OXIDATION STACKING-FAULTS IN EPITAXIAL SILICON-CRYSTALS
    CONTI, M
    CORDA, G
    MATTEUCCI, R
    GHEZZI, C
    JOURNAL OF MATERIALS SCIENCE, 1975, 10 (04) : 705 - 713
  • [10] SUPPRESSION MECHANISMS FOR OXIDATION STACKING-FAULTS IN SILICON ON INSULATOR
    GUILLEMOT, N
    TSOUKALAS, D
    TSAMIS, C
    MARGAIL, J
    PAPON, AM
    STOEMENOS, J
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (04) : 1713 - 1720
12345