IDENTIFICATION, ANNIHILATION, AND SUPPRESSION OF NUCLEATION SITES RESPONSIBLE FOR SILICON EPITAXIAL STACKING-FAULTS

被引：85

作者：

ROZGONYI, GA

DEYSHER, RP

PEARCE, CW

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

[2] WESTERN ELECT CO INC,ALLENTOWN,PA 18103

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 12期

关键词：

D O I：

10.1149/1.2132722

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1910 / 1915

页数：6

共 50 条

[41] FORMATION OF STACKING-FAULTS IN SELECTIVE OXIDATION OF SILICON
SHINDO, M
OSADA, Y
KANEKO, N
MASUDA, M
DENKI KAGAKU, 1978, 46 (03): : 166 - 171
[42] ON THE IDENTIFICATION OF THE NATURE OF STACKING-FAULTS IN HCP MATERIALS
PEREZ, R
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 85 (01): : 113 - 119
[43] CONTROL OF STACKING FAULTS IN EPITAXIAL SILICON
HANETA, Y
JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (01) : 69 - &
[44] FORMATION OF STACKING-FAULTS AND ENHANCED DIFFUSION IN OXIDATION OF SILICON
HU, SM
JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1567 - 1573
[45] GENERALIZED WANNIER FUNCTIONS AT INTERFACES - STACKING-FAULTS IN SILICON
SANCHEZDEHESA, J
VERGES, JA
TEJEDOR, C
PHYSICAL REVIEW B, 1981, 24 (02): : 1006 - 1013
[46] GENERATION OF STACKING-FAULTS AND DISLOCATION LOOPS IN SILICON WAFERS
PRUSSIN, S
JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) : 733 - &
[47] ANOMALOUS TEMPERATURE EFFECT OF OXIDATION STACKING-FAULTS IN SILICON
HU, SM
APPLIED PHYSICS LETTERS, 1975, 27 (04) : 165 - 167
[48] FORMATION OF STACKING-FAULTS AND DISLOCATIONS IN PHOSPHORUS DIFFUSED SILICON
TSENG, WF
LAU, SS
MAYER, JW
PHYSICS LETTERS A, 1978, 68 (01) : 93 - 94
[49] ELIMINATION OF STACKING-FAULTS BY PREOXIDATION GETTERING OF SILICON WAFERS
ROZGONYI, GA
KUSHNER, RA
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (04) : 570 - 576
[50] DEFECT STATES ASSOCIATED WITH DISLOCATIONS AND STACKING-FAULTS IN SILICON
KIMERLING, LC
LEAMY, HJ
PATEL, JR
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (03): : 267 - 267

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