SHRINKAGE AND ANNIHILATION OF STACKING-FAULTS IN SILICON

被引：27

作者：

SUGITA, Y ^{[1
]}

SHIMIZU, H ^{[1
]}

YOSHINAKA, A ^{[1
]}

AOSHIMA, T ^{[1
]}

机构：

[1] HITACHI LTD,DIV SEMICONDUCTOR & INTEGRATED CIRCUITS,KODAIRO,TOKYO 187,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1977年 / 14卷 / 01期

关键词：

D O I：

10.1116/1.569260

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：44 / 46

页数：3

共 50 条

[31] FORMATION OF STACKING-FAULTS AND DISLOCATIONS IN PHOSPHORUS DIFFUSED SILICON
TSENG, WF
LAU, SS
MAYER, JW
PHYSICS LETTERS A, 1978, 68 (01) : 93 - 94
[32] ELIMINATION OF STACKING-FAULTS BY PREOXIDATION GETTERING OF SILICON WAFERS
ROZGONYI, GA
KUSHNER, RA
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (04) : 570 - 576
[33] DEFECT STATES ASSOCIATED WITH DISLOCATIONS AND STACKING-FAULTS IN SILICON
KIMERLING, LC
LEAMY, HJ
PATEL, JR
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (03): : 267 - 267
[34] QUANTITATIVE EBIC INVESTIGATIONS ON BULK STACKING-FAULTS IN SILICON
KITTLER, M
SCHRODER, KW
BUGIEL, E
BECKER, C
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 81 (02): : K131 - &
[35] THE ELECTRICAL-ACTIVITY OF STACKING-FAULTS IN CZOCHRALSKI SILICON
CASTALDINI, A
CAVALLINI, A
POGGI, A
SUSI, E
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1989, 48 (05): : 431 - 436
[36] CIRCULAR AND HEXAGONAL STACKING-FAULTS IN BULK SILICON CRYSTALS
DYER, LD
VOLTMER, FW
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (06) : 812 - 817
[37] ELECTRICAL-ACTIVITY OF BULK STACKING-FAULTS IN SILICON
HADDAD, H
FORBES, L
MATERIALS LETTERS, 1988, 7 (03) : 99 - 101
[38] WURTZITE STACKING-FAULTS
COLAITIS, D
MATERIALS RESEARCH BULLETIN, 1976, 11 (02) : 107 - 116
[39] OXIDATION-ENHANCED OR RETARDED DIFFUSION AND THE GROWTH OR SHRINKAGE OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON
TAN, TY
GOSELE, U
APPLIED PHYSICS LETTERS, 1982, 40 (07) : 616 - 619
[40] WIDTH OF STACKING-FAULTS
CLAREBROUGH, LM
HEAD, AK
PHILOSOPHICAL MAGAZINE, 1976, 33 (03): : 557 - 557

← 1 2 3 4 5 →