GROWTH OF STACKING-FAULTS AND DISLOCATIONS INDUCED IN SILICON BY PHOSPHORUS PREDEPOSITION

被引：33
|
作者：
ARMIGLIATO, A [1 ]
SERVIDORI, M [1 ]
SOLMI, S [1 ]
VECCHI, I [1 ]
机构：
[1] CNR,LAMEL LAB,I-40126 BOLOGNA,ITALY
来源：
JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 05期
关键词：
D O I：
10.1063/1.323931
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1806 / 1812
页数：7
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