RING-SHAPED STACKING-FAULTS INDUCED BY OXIDE PRECIPITATES IN SILICON

被引：19
|
作者：
PLOUGONVEN, C
LEROY, B
ARHAN, J
LECUILLER, A
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 05期
关键词：
D O I：
10.1063/1.325192
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：2711 / 2716
页数：6
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