RING-SHAPED STACKING-FAULTS INDUCED BY OXIDE PRECIPITATES IN SILICON

被引：19

|

作者：

PLOUGONVEN, C

LEROY, B

ARHAN, J

LECUILLER, A

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 05期

关键词：

D O I：

10.1063/1.325192

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

下载

收藏

页码：2711 / 2716

页数：6

相关论文

共 50 条

[41] DEFECT STATES ASSOCIATED WITH DISLOCATIONS AND STACKING-FAULTS IN SILICON
KIMERLING, LC
LEAMY, HJ
PATEL, JR
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (03): : 267 - 267
[42] ELIMINATION OF STACKING-FAULTS BY PREOXIDATION GETTERING OF SILICON WAFERS
ROZGONYI, GA
KUSHNER, RA
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (04) : 570 - 576
[43] FORMATION OF STACKING-FAULTS AND DISLOCATIONS IN PHOSPHORUS DIFFUSED SILICON
TSENG, WF
LAU, SS
MAYER, JW
PHYSICS LETTERS A, 1978, 68 (01) : 93 - 94
[44] QUANTITATIVE EBIC INVESTIGATIONS ON BULK STACKING-FAULTS IN SILICON
KITTLER, M
SCHRODER, KW
BUGIEL, E
BECKER, C
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 81 (02): : K131 - &
[45] CIRCULAR AND HEXAGONAL STACKING-FAULTS IN BULK SILICON CRYSTALS
DYER, LD
VOLTMER, FW
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (06) : 812 - 817
[46] THE ELECTRICAL-ACTIVITY OF STACKING-FAULTS IN CZOCHRALSKI SILICON
CASTALDINI, A
CAVALLINI, A
POGGI, A
SUSI, E
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1989, 48 (05): : 431 - 436
[47] INCREMENTAL DEPTH PROFILE STUDIES ON OXIDATION-INDUCED STACKING-FAULTS IN SILICON
INGREY, SIJ
MANIV, S
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C365 - C365
[48] ELECTRICAL-ACTIVITY OF BULK STACKING-FAULTS IN SILICON
HADDAD, H
FORBES, L
MATERIALS LETTERS, 1988, 7 (03) : 99 - 101
[49] REDUCTION OF N-100 OXIDATION INDUCED STACKING-FAULTS IN CZOCHRALSKI SILICON
KOOB, P
CRAVEN, R
FRAUNDORF, G
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (08) : C316 - C316
[50] LASER-ENHANCED NUCLEATION OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON
HAYAFUJI, Y
OGAWA, J
AOKI, Y
SHIBATA, A
USUI, S
JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) : 3606 - 3608

← 1 2 3 4 5 →