FAST SHRINKAGE OF OXIDATION STACKING-FAULTS DURING O2/NF3 OXIDATION OF SILICON

被引：5

|

作者：

KIM, US

JACCODINE, RJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 18期

关键词：

D O I：

10.1063/1.97414

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1201 / 1203

页数：3

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