ELIMINATION OF STACKING-FAULTS IN SILICON WAFERS BY HCL ADDED DRY O2 OXIDATION

被引：55

作者：

SHIRAKI, H ^{[1
]}

机构：

[1] NIPPON ELECT CO,CENT RES LABS,1753 SHIMONUMABE,KAWASAKI,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1975年 / 14卷 / 06期

关键词：

D O I：

10.1143/JJAP.14.747

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：747 / 752

页数：6

共 50 条

[1] ELIMINATION OF OXIDATION INDUCED STACKING-FAULTS BY PREOXIDATION GETTERING IN SILICON WAFERS
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