FAST SHRINKAGE OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON AT THE INITIAL-STAGE OF ANNEALING IN NITROGEN

被引：8

|

作者：

NISHI, K

ANTONIADIS, DA

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 05期

关键词：

D O I：

10.1063/1.95577

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：516 / 518

页数：3

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