High-voltage active quenching and resetting circuit for SPADs in 0.35 μm CMOS for raising the photon detection probability

被引:8
|
作者
Dervic, Alija [1 ]
Steindl, Bernhard [1 ]
Hofbauer, Michael [1 ]
Zimmermann, Horst [1 ]
机构
[1] Vienna Univ Technol, Inst Electrodynam Microwave & Circuit Engn, Fac Elect Engn, Vienna, Austria
关键词
single-photon avalanche diode; active quenching; high-voltage quenching; photon detection probability; optoelectonic integrated circuits; photodetectors; DETECTION EFFICIENCY; AVALANCHE-DIODE; TECHNOLOGY;
D O I
10.1117/1.OE.58.4.040501
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A fully integrated single-photon avalanche diode (SPAD) using a high-voltage quenching circuit fabricated in a 0.35-mu m CMOS process is proposed. The quenching circuit features a quenching voltage of 9.9 V, which is three times the nominal supply voltage to increase the photon detection probability (PDP). To prove the quenching performance, the circuit has been integrated together with a large-area SPAD having an active diameter of 90 mu m. Experimental verification shows a maximum PDP of 67.8% at 9.9 V excess bias at a wavelength of 642 nm. (C) 2019 Society of Photo-Optical Instrumentation Engineers (SPIE).
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页数:4
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