High-voltage active quenching and resetting circuit for SPADs in 0.35 μm CMOS for raising the photon detection probability

被引：8

作者：

Dervic, Alija ^{[1
]}

Steindl, Bernhard ^{[1
]}

Hofbauer, Michael ^{[1
]}

Zimmermann, Horst ^{[1
]}

机构：

[1] Vienna Univ Technol, Inst Electrodynam Microwave & Circuit Engn, Fac Elect Engn, Vienna, Austria

来源：

OPTICAL ENGINEERING | 2019年 / 58卷 / 04期

关键词：

single-photon avalanche diode; active quenching; high-voltage quenching; photon detection probability; optoelectonic integrated circuits; photodetectors; DETECTION EFFICIENCY; AVALANCHE-DIODE; TECHNOLOGY;

D O I：

10.1117/1.OE.58.4.040501

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A fully integrated single-photon avalanche diode (SPAD) using a high-voltage quenching circuit fabricated in a 0.35-mu m CMOS process is proposed. The quenching circuit features a quenching voltage of 9.9 V, which is three times the nominal supply voltage to increase the photon detection probability (PDP). To prove the quenching performance, the circuit has been integrated together with a large-area SPAD having an active diameter of 90 mu m. Experimental verification shows a maximum PDP of 67.8% at 9.9 V excess bias at a wavelength of 642 nm. (C) 2019 Society of Photo-Optical Instrumentation Engineers (SPIE).

引用

页数：4

共 23 条

[1] Transient measurements and mixed quenching, active resetting circuit for SPAD in 0.35 μm high-voltage CMOS for achieving 218 Mcps
Dervic, Alija
Goll, Bernhard
Steindl, Bernhard
Zimmermann, Horst
[J]. 2019 26TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS (ICECS), 2019, : 819 - 822
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Dervic, Alija
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