Transient measurements and mixed quenching, active resetting circuit for SPAD in 0.35 μm high-voltage CMOS for achieving 218 Mcps

被引：0

作者：

Dervic, Alija ^{[1
]}

Goll, Bernhard ^{[1
]}

Steindl, Bernhard ^{[1
]}

Zimmermann, Horst ^{[1
]}

机构：

[1] Vienna Univ Technol, Inst Electrodynam Mircowave & Circuit Engn, Vienna, Austria

来源：

2019 26TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS (ICECS) | 2019年

关键词：

mixed quenching circuit; active resetting circuit; SPAD; photon counting; CMOS; avalanche current transient;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully integrated single-photon avalanche diode (SPAD) using a controllable fast mixed quenching and active resetting circuit (QRC) fabricated in a 0.35-mu m high- voltage CMOS process is presented in this paper. The QRC features a fast active quenching time of 0.52 ns and a minimum dead-time of 4.57 ns, which corresponds to a maximum count rate of 218 Mcps. To validate the quenching performance, the circuit was integrated together with a large-area SPAD having an active diameter of 90 mu m with a capacitance of 150 fF. A pad for a pico- probe was integrated on the chip, leading to a total capacitive load of 275 fF in SPAD cathode's node during transient measurements.

引用

页码：819 / 822

页数：4

共 21 条

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Dervic, Alija
Steindl, Bernhard
Hofbauer, Michael
Zimmermann, Horst
[J]. OPTICAL ENGINEERING, 2019, 58 (04)
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Dervic, Alija
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Zimmermann, Horst
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[3] Quadruple voltage mixed quenching and active resetting circuit in 150 nm CMOS for an external SPAD
Dervic, Alija
Goll, Bernhard
Zimmermann, Horst
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Zimmermann, Horst
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