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- [1] SPAD Mixed-Quenching Circuit in 0.35-μm CMOS for Achieving a PDP of 39.2% at 854 nm [J]. 2022 29TH INTERNATIONAL CONFERENCE ON MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEM (MIXDES 2022), 2022, : 116 - 119
- [3] Fully-integrated SPAD active quenching/resetting circuit in high-voltage 0.35-μm CMOS for reaching PDP saturation at 650 nm [J]. 2021 24TH INTERNATIONAL SYMPOSIUM ON DESIGN AND DIAGNOSTICS OF ELECTRONIC CIRCUITS & SYSTEMS (DDECS), 2021, : 1 - 5
- [4] Quadruple voltage mixed quenching and active resetting circuit in 150 nm CMOS for an external SPAD [J]. 2020 23RD INTERNATIONAL SYMPOSIUM ON DESIGN AND DIAGNOSTICS OF ELECTRONIC CIRCUITS & SYSTEMS (DDECS 2020), 2020,
- [5] Transient measurements and mixed quenching, active resetting circuit for SPAD in 0.35 μm high-voltage CMOS for achieving 218 Mcps [J]. 2019 26TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS (ICECS), 2019, : 819 - 822
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