High-voltage drive and I/O interfaces in a 0.35-μm CMOS process

被引：2
|
作者：
Krenzke, Rainer [1 ]
Ji, Cang [1 ]
Salzmann, Oliver [1 ]
机构：
[1] Dialog Semiconductor, Kirchheim unter Teck, Germany
来源：
2006 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-11, PROCEEDINGS | 2006年
关键词：
D O I：
10.1109/ISCAS.2006.1692976
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
This paper describes various high-voltage drive and I/O interfaces developed as building blocks typically used for drive and control ICs. The interfaces can be used at voltages of up to 40V. They are implemented as CMOS-only circuits in a 0.35-mu m standard CMOS process using an additional high-voltage module. The presented interfaces include an output driver, a serial bus transceiver, usable for ISO 9141 or LIN type communication ports, and general-purpose I/O port.
引用
收藏
页码：1880 / +
页数：2
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