PIN-photodiode based active pixel in 0.35 μm high-voltage CMOS for optical coherence tomography

被引：0

作者：

Vlaskovic, Marko ^{[1
]}

Zimmermann, Horst ^{[2
]}

Meinhardt, Gerald ^{[1
]}

Kraft, Jochen ^{[1
]}

Sagmeister, Martin ^{[1
]}

Schoegler, Johannes ^{[1
]}

机构：

[1] Ams AG, Unterpremstatten, Austria

[2] TU Wien, Inst Electrodynam Microwave & Circuit Engn, Vienna, Austria

来源：

2019 42ND INTERNATIONAL CONVENTION ON INFORMATION AND COMMUNICATION TECHNOLOGY, ELECTRONICS AND MICROELECTRONICS (MIPRO) | 2019年

关键词：

PIN photodiode; active pixel; high resistivity; waveguide coupling; 0.35 mu m CMOS; low crosstalk; low noise; NOISE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents an active pixel based on a PIN photodiode for application in Optical Coherence Tomography (OCT), where a high responsivity and low crosstalk is required. The proposed pixel is built on a wafer with a high-resistivity epitaxial silicon layer and optimized for high efficiency at 850 nm, low dark current, low crosstalk, and low noise operation. Advantages of this approach over conventional approaches such as the 3T active pixel in a standard CMOS process and over 4T pinned photodiode active pixel approaches for OCT applications are explained. A test chip was fabricated in 0.35 mu m high-voltage CMOS. Three different epitaxial layer thicknesses are investigated. Measured results of the OCT PIN-photodiode pixel are presented.

引用

页码：36 / 40

页数：5

共 27 条

[1] Optical and electrical simulations of radiation-hard photodiode in 0.35μm high-voltage CMOS technology
Segmanovic, Filip
Roger, Frederic
Meinhard, Gerald
Jonak-Auer, Ingrid
Suligoj, Tomislav
[J]. 2018 28TH INTERNATIONAL SYMPOSIUM ON POWER AND TIMING MODELING, OPTIMIZATION AND SIMULATION (PATMOS), 2018, : 92 - 96
[2] PIN photodiode-based active pixel for a near-infrared imaging application in 0.35-μm CMOS
Vlaskovic, Marko
Zimmermann, Horst
Meinhardt, Gerald
Kraft, Jochen
[J]. OPTICAL ENGINEERING, 2020, 59 (07)
[3] High-Voltage CMOS Active Pixel Sensor
Peric, Ivan
Andreazza, Attilio
Augustin, Heiko
Barbero, Marlon
Benoit, Mathieu
Casanova, Raimon
Ehrler, Felix
Iacobucci, Giuseppe
Leys, Richard
Gonzalez, Annie Meneses
Pangaud, Patrick
Prathapan, Mridula
Schimassek, Rudolf
Schoening, Andre
Figueras, Eva Vilella
Weber, Alena
Weber, Michele
Wong, Winnie
Zhang, Hui
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2021, 56 (08) : 2488 - 2502
[4] pn photodiode in 0.35-μm high-voltage CMOS with 1.2-GHz bandwidth
Enne, Reinhard
Steindl, Bernhard
Schneider-Hornstein, Kerstin
Zimmermann, Horst
[J]. OPTICAL ENGINEERING, 2014, 53 (11)
[5] FlexRay transceiver in a 0.35 μm CMOS High-Voltage technology
Baronti, F.
D'Abramo, P.
Knaipp, M.
Minixhofer, R.
Roncella, R.
Saletti, R.
Schrems, M.
Serventi, R.
Vescoli, V.
[J]. 2006 DESIGN AUTOMATION AND TEST IN EUROPE, VOLS 1-3, PROCEEDINGS, 2006, : 1536 - +
[6] Active pixel sensors in high-voltage CMOS technologies for ATLAS
Peric, I.
[J]. JOURNAL OF INSTRUMENTATION, 2012, 7
[7] Integration of high-voltage bipolars into a 0.35μm CMOS based smart power platform
Parthasarathy, V
Zhu, R
Khemka, V
Ger, ML
Bettinger, T
Chang, S
Hui, P
Bose, A
[J]. PROCEEDINGS OF THE 2000 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2000, : 32 - 35
[8] Large Active Area, Low Capacitance Multi-Dot PIN Photodiode in 0.35 μm CMOS Technology
Poushi, S. S. Kohneh
Goll, B.
Schneider-Hornstein, K.
Zimmermann, Horst
[J]. IEEE PHOTONICS JOURNAL, 2024, 16 (01): : 1 - 6
[9] High-voltage active quenching and resetting circuit for SPADs in 0.35 μm CMOS for raising the photon detection probability
Dervic, Alija
Steindl, Bernhard
Hofbauer, Michael
Zimmermann, Horst
[J]. OPTICAL ENGINEERING, 2019, 58 (04)
[10] Lateral linear mode avalanche photodiode through 0.35 μm high voltage CMOS process
Guo-Hao, Ju
Zheng-Xi, Cheng
Yong-Ping, Chen
[J]. JOURNAL OF INFRARED AND MILLIMETER WAVES, 2022, 41 (04) : 668 - 671

← 1 2 3 →