The impact of laser energy, bias and irradiation positions on single event transients of InP HBT

被引：4
|
作者：
Zhao, Xiao-Hong [1 ]
Lu, Hong-Liang [1 ]
Zhang, Yu-Ming [1 ]
Zhang, Yi-Men [1 ]
Wei, Zhi-Chao [2 ]
机构：
[1] Xidian Univ, Sch Microelect, State Key Lab Wide Band Gap Semicond Technol, Xian 710071, Peoples R China
[2] China Acad Space Technol, Beijing 100094, Peoples R China
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2020年 / 53卷 / 14期
关键词：
single event transient; transient current; charge collection mechanism; pulsed laser; COLLECTION;
D O I：
10.1088/1361-6463/ab6622
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The mechanism of single event transients in indium phosphide heterojunction bipolar transistors are studied with different laser energy, collector and irradiation positions based on a pulsed laser experiment. The area of the depletion region neutralized by the laser track determines the area of the funnel region, and affects the total charges collected by collector Q(Total). The total charge collection consists of the charge collected in the depletion region, the charges collected in funnel region, and the diffusion charges. The larger the area of the neutralized depletion region, the larger the area of the funnel region, thus, the more electron-hole pairs would be collected. The influence of laser energy, collector bias and irradiation positions on total charge collection is studied and discussed in detail.
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页数：8
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