The Role of Negative Feedback Effects on Single-Event Transients in SiGe HBT Analog Circuits

被引：6

作者：

Seungwoo, Jung ^{[1
]}

Song, Ickhyun ^{[1
]}

Fleetwood, Zachary E. ^{[1
]}

Raghunathan, Uppili ^{[1
]}

Lourenco, Nelson E. ^{[1
]}

Oakley, Michael A. ^{[1
]}

Wier, Brian R. ^{[1
]}

Roche, Nicolas J. -H. ^{[2
]}

Khachatrian, Ani ^{[2
]}

McMorrow, Dale ^{[2
]}

Buchner, Stephen P. ^{[2
]}

Warner, Jeffrey H. ^{[2
]}

Paki, Pauline ^{[3
]}

Cressler, John D. ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[2] Naval Res Lab, Washington, DC 20375 USA

[3] Def Threat Reduct Agcy, Ft Belvoir, VA 22060 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2015年 / 62卷 / 06期

关键词：

Current mirrors; negative feedback; radiation hardening; SiGe BiCMOS HBT; silicon-germanium; single-event; single-event transient; Wilson current mirror; INVERSE-MODE; DESIGN; LOGIC;

D O I：

10.1109/TNS.2015.2498540

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of negative feedback, both external and internal, on single event transients (SETs) in SiGe HBT analog circuits are investigated. In order to examine internal negative feedback effects, basic common-emitter NPN current mirrors, with and without emitter degeneration resistors, are utilized. A Wilson current mirror and a Wilson mirror with its intrinsic external feedback removed are used to study external negative feedback effects under the influence of laser-induced single events. The measurement data clearly show notable improvements in SET response that can be made by employing both internal and external negative feedback. The peak transient in the output current is reduced, and the settling time upon a laser strike is shortened significantly by negative feedback. All four investigated current mirrors were fabricated with IBM 8HP 130 nm SiGe BiCMOS technology.

引用

页码：2599 / 2605

页数：7

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