An Investigation of Single-Event Transients in C-SiGe HBT on SOI Current Mirror Circuits

被引:17
|
作者
Jung, Seungwoo [1 ]
Lourenco, Nelson E. [1 ]
Song, Ickhyun [1 ]
Oakley, Michael A. [1 ]
England, Troy D. [1 ]
Arora, Rajan [2 ]
Cardoso, Adilson S. [1 ]
Roche, Nicolas J. -H. [3 ]
Khachatrian, Ani [3 ]
McMorrow, Dale [3 ]
Buchner, Stephen P. [3 ]
Melinger, Joseph S. [3 ]
Warner, Jeffrey H. [3 ]
Paki-Amouzou, Pauline [4 ]
Babcock, Jeff A. [2 ]
Cressler, John D. [1 ]
机构
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[2] Texas Instruments Inc, Dallas, TX 75243 USA
[3] Naval Res Lab, Washington, DC 20375 USA
[4] Def Threat Reduct Agcy, Ft Belvoir, VA 22060 USA
关键词
Current mirrors; inverse-mode operation; mixed-mode simulation; radiation hardening; SiGe HBT; single-event effects; single-event transient; single-event upset; TCAD; DESIGNING ELECTRONIC SYSTEMS; DEEP TRENCH ISOLATION; INVERSE-MODE; VOLTAGE REFERENCES; RHBD TECHNIQUES; RADIATION; MITIGATION; OPERATION; PERFORMANCE; IMPACT;
D O I
10.1109/TNS.2014.2358207
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The single-event effect sensitivity of three different commonly employed current mirror circuits, as well as an unconventional inverse-mode current mirror, all implemented in C-SiGe (NPN + PNP) HBT on SOI technology are investigated. Comparisons of the measured data of the basic NPN and PNP current mirror circuits show higher single-event radiation tolerance of PNP SiGe HBTs compared with NPN SiGe HBTs. The concept of utilizing inverse-mode SiGe HBTs in current mirror circuits is investigated. Measurement results validate the feasibility of employing inverse-mode PNP SiGe HBTs in current mirrors and show an excellent resilience against ion-strikes. Full 3-D NanoTCAD models of the SiGe HBTs are developed and used in mixed-mode TCAD simulations (within Cadence) to validate the measurement results. Finally, based on the measurement data and analysis of the four current mirrors, some practical suggestions and observations are offered for operation of such circuits in extreme environments.
引用
收藏
页码:3193 / 3200
页数:8
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