SiGe HBT Profiles With Enhanced Inverse-Mode Operation and Their Impact on Single-Event Transients

被引：10

作者：

Fleetwood, Zachary E. ^{[1
]}

Ildefonso, Adrian ^{[1
]}

Tzintzarov, George N. ^{[1
]}

Wier, Brian ^{[1
]}

Raghunathan, Uppili ^{[1
]}

Cho, Moon-Kyu ^{[1
]}

Song, Ickhyun ^{[1
]}

Wachter, Mason T. ^{[1
]}

Nergui, Delgermaa ^{[1
]}

Khachatrian, Ani ^{[2
,3
]}

Warner, Jeffrey H. ^{[2
]}

McMarr, Patrick ^{[2
]}

Hughes, Harold ^{[2
]}

Zhang, Enxia ^{[4
]}

McMorrow, Dale ^{[2
]}

Paki, Pauline ^{[5
]}

Joseph, Alvin ^{[6
]}

Jain, Vibhor ^{[6
]}

Cressler, John D. ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[2] Naval Res Lab, Washington, DC 20375 USA

[3] Sotera Def, Annapolis Jct, MD 20701 USA

[4] Vanderbilt Univ, Nashville, TN 37235 USA

[5] Def Threat Reduct Agcy, Ft Belvoir, VA 22060 USA

[6] Globalfoundries, Hopewell Jct, NY 12533 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2018年 / 65卷 / 01期

关键词：

Inverse-mode (IM); radiation-hardening-by-process (RHBP); silicon-germanium heterojunction bipolar transistor (SiGe HBT); single-event transient (SET); superjunction (SJ); total ionizing dose (TID); DESIGN;

D O I：

10.1109/TNS.2017.2782183

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The doping profile of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) is modified to enhance inverse-mode (IM) device operation. Device improvements are presented in this paper, along with the impact the alterations have on the radiation effects response. This investigation represents the first published occurrence of a radiation-hardening-by-process approach in a SiGe HBT technology. Results show that improving IM performance can degrade the radiation tolerance of the structure. Total ionizing dose and single-event transient (SET) results are provided along with an analysis that utilizes TCAD simulation. An additional profile modification using an implanted vertical superjunction is included in this paper to expand upon how nonradiation specific device modifications can impact SETs.

引用

页码：399 / 406

页数：8

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