A comparison of heavy ion and picosecond laser microbeams for investigating single event transients in InGaAs on InP photodetectors

The MeV ion and laser microbeams are the two most commonly used tools for examining the spatial and temporal dependence of charge collection processes that lead to single event phenomena in semiconductor devices. In this paper, we perform a detailed comparison of the fundamental differences that exist between the two methods for examining single event transients in InGaAs photodetectors. In particular, we compare results collected by transient laser and ion beam induced current for several ion species. (C) 2003 Elsevier B.V. All rights reserved.