Using TCAD Modeling to Compare Heavy-Ion and Laser-Induced Single Event Transients in SiGe HBTs

被引：29
|
作者：
Fleetwood, Zachary E. [1 ]
Lourenco, Nelson E. [1 ]
Ildefonso, Adrian [1 ]
Warner, Jeffrey H. [2 ]
Wachter, Mason T. [1 ]
Hales, Joel M. [2 ,3 ]
Tzintzarov, George N. [1 ]
Roche, Nicolas J. -H. [2 ,4 ]
Khachatrian, Ani [2 ,3 ]
Buchner, Steven P. [2 ]
McMorrow, Dale [2 ]
Paki, Pauline [5 ]
Cressler, John D. [1 ]
机构：
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[2] Naval Res Lab, Washington, DC 20375 USA
[3] Sotera Def, Annapolis Jct, MD 20701 USA
[4] George Washington Univ, Washington, DC 20052 USA
[5] Def Threat Reduct Agcy, Ft Belvoir, VA 22060 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2017年 / 64卷 / 01期
关键词：
Effective LET; heavy-ion; pulsed-laser; SiGe HBT; single event effect; single event transient; technology computer aided design (TCAD); two-photon absorption; 2-PHOTON ABSORPTION; CARRIER GENERATION; CHARGE; SIMULATION; TRANSPORT; SILICON; LOGIC;
D O I：
10.1109/TNS.2016.2637322
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Silicon-germanium heterojunction bipolar transistor (SiGe HBT) models are used in technology computer aided design (TCAD) to investigate single event transients induced by heavy-ion broadbeam and pulsed-laser two-photon absorption sources. A comparison between transient waveforms is provided, the proper extraction of heavy-ion broadbeam transients is discussed (along with circuit implications), and basic laser strike profiles are implemented in TCAD to provide insight into future design practices for simulation software to be used to describe laser-induced upsets in terms of an effective linear energy transfer (LET).
引用
收藏
页码：398 / 405
页数：8
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