Pulsed laser Evaluation of Single Event Transients in Optocouplers

被引:0
|
作者
Ma Yingqi [1 ,2 ]
Feng Guoqiang [1 ]
Han Jianwei [1 ]
机构
[1] CSSAR, Beijing, Peoples R China
[2] GUCAS, Beijing, Peoples R China
关键词
Pulsed laser evaluation; Single event transients; Optocouplers; Single Event Effects; COLLECTION; CHARGE; ANALOG; UPSET;
D O I
暂无
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
A methodology which used pulsed laser to evaluate the Single Event Transients (SETs) in the optocouplers was proposed. The SETs responses of the optocouplers were firstly investigated with the experimental simulation by pulsed laser test facility. The pulsed laser test data was compared with the ion test data to indicate the veracity and to provide insights into the SETs mechanism. The SETs characters induced by pulsed laser were qualitatively analyzed in model theory.
引用
收藏
页码:1044 / +
页数:2
相关论文
共 50 条
  • [1] Single Event Transients Generation in Silicon Devices with Pulsed Laser A comparative Study
    De Paul, Ivan
    Bandi, Franco N.
    Segura, Jaume
    Bota, Sebastia A.
    [J]. PROCEEDINGS OF THE 2015 10TH SPANISH CONFERENCE ON ELECTRON DEVICES (CDE), 2015, : 3 - +
  • [2] Pulsed-laser testing methodology for single event transients in linear devices
    Buchner, S
    Howard, J
    Poivey, C
    McMorrow, D
    Pease, R
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (06) : 3716 - 3722
  • [3] SINGLE EVENT TRANSIENTS IN PDSOI CMOS INVERTER CHAIN IRRADIATED BY PULSED LASER
    Zhao, Xing
    Mei, Bo
    Bi, Jinshun
    Zheng, Zhongshan
    Gao, Linchun
    Zeng, Chuanbin
    Luo, Jiajun
    Yu, Fang
    Han, Zhengsheng
    [J]. 2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2014,
  • [4] Assessing the impact of the space radiation environment on parametric degradation and single-event transients in optocouplers
    Reed, RA
    Poivey, C
    Marshall, PW
    LaBel, KA
    Marshall, CJ
    Kniffin, S
    Barth, JL
    Seidleck, C
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2001, 48 (06) : 2202 - 2209
  • [5] The Effects of Elevated Temperature on Pulsed-Laser-Induced Single Event Transients in Analog Devices
    Chen, Dakai
    Buchner, Stephen P.
    Phan, Anthony M.
    Kim, Hak S.
    Sternberg, Andrew L.
    McMorrow, Dale
    LaBel, Kenneth A.
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2009, 56 (06) : 3138 - 3144
  • [6] Probabilistic evaluation of analog single event transients
    Kauppila, Amy V.
    Vaughn, Gregg L.
    Kauppila, Jeffrey S.
    Massengill, Lloyd W.
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2007, 54 (06) : 2131 - 2136
  • [7] Single-event upset effects in optocouplers
    Johnston, AH
    Swift, GM
    Miyahira, T
    Guertin, S
    Edmonds, LD
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1998, 45 (06) : 2867 - 2875
  • [8] Pulsed-Laser Induced Single-Event Transients in InGaAs FinFETs on Bulk Silicon Substrates
    Gong, Huiqi
    Ni, Kai
    Zhang, En Xia
    Sternberg, Andrew L.
    Kozub, John A.
    Alles, Michael L.
    Reed, Robert A.
    Fleetwood, Daniel M.
    Schrimpf, Ronald D.
    Waldron, Niamh
    Kunert, Bernardette
    Linten, Dimitri
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 66 (01) : 376 - 383
  • [9] Reliability Evaluation for Single Event Transients on Digital Circuits
    Liu, Baojun
    Cai, Li
    [J]. IEEE TRANSACTIONS ON RELIABILITY, 2012, 61 (03) : 687 - 691
  • [10] Heavy-ion and pulsed laser induced single-event double transients in nanometer inverter chain
    Zhao, Wen
    Chen, Wei
    He, Chaohui
    Chen, Rongmei
    Zhang, Fengqi
    Guo, Xiaoqiang
    Lu, Chao
    Shen, Chen
    [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2023, 178 (3-4): : 393 - 405