Pulsed-laser testing methodology for single event transients in linear devices

被引:40
|
作者
Buchner, S [1 ]
Howard, J
Poivey, C
McMorrow, D
Pease, R
机构
[1] QSS Grp Inc, Greenbelt, MD 20772 USA
[2] Jackson & Tull, Greenbelt, MD 20771 USA
[3] SGT Inc, Greenbelt, MD 20770 USA
[4] USN, Res Lab, Washington, DC 20375 USA
[5] RLP Res, Albuquerque, NM 87122 USA
关键词
linear devices; pulsed-laser testing; radiation single event transients;
D O I
10.1109/TNS.2004.839263
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A methodology for testing linear devices for single event transients that uses a pulsed laser to supplement a heavy-ion accelerator is proposed. The method is based on an analysis of plots of transient amplitudes versus width over a range of laser pulse input energies and heavy-ion LETs. Additional data illustrating the method are presented that include the dependence of SETs on circuit configuration in a comparator (LM111) and operational amplifier (LM124). If judiciously used, the methodology has the advantage that the amount of heavy-ion accelerator testing can be reduced.
引用
收藏
页码:3716 / 3722
页数:7
相关论文
共 50 条
  • [1] Pulsed-Laser Testing for Single-Event Effects Investigations
    Buchner, Stephen P.
    Miller, Florent
    Pouget, Vincent
    McMorrow, Dale P.
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60 (03) : 1852 - 1875
  • [2] Development of a test methodology for single-event transients (SETs) in linear devices
    Poivey, C
    Howard, JW
    Buchner, S
    LaBel, KA
    Forney, JD
    Kim, HS
    Assad, A
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2001, 48 (06) : 2180 - 2186
  • [3] Single Event Transients Generation in Silicon Devices with Pulsed Laser A comparative Study
    De Paul, Ivan
    Bandi, Franco N.
    Segura, Jaume
    Bota, Sebastia A.
    [J]. PROCEEDINGS OF THE 2015 10TH SPANISH CONFERENCE ON ELECTRON DEVICES (CDE), 2015, : 3 - +
  • [4] Pulsed-Laser Induced Single-Event Transients in InGaAs FinFETs on Bulk Silicon Substrates
    Gong, Huiqi
    Ni, Kai
    Zhang, En Xia
    Sternberg, Andrew L.
    Kozub, John A.
    Alles, Michael L.
    Reed, Robert A.
    Fleetwood, Daniel M.
    Schrimpf, Ronald D.
    Waldron, Niamh
    Kunert, Bernardette
    Linten, Dimitri
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 66 (01) : 376 - 383
  • [5] Pulsed laser Evaluation of Single Event Transients in Optocouplers
    Ma Yingqi
    Feng Guoqiang
    Han Jianwei
    [J]. TENCON 2009 - 2009 IEEE REGION 10 CONFERENCE, VOLS 1-4, 2009, : 1044 - +
  • [6] The Effects of Elevated Temperature on Pulsed-Laser-Induced Single Event Transients in Analog Devices
    Chen, Dakai
    Buchner, Stephen P.
    Phan, Anthony M.
    Kim, Hak S.
    Sternberg, Andrew L.
    McMorrow, Dale
    LaBel, Kenneth A.
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2009, 56 (06) : 3138 - 3144
  • [7] Comparison of Single Event Transients Generated at Four Pulsed-Laser Test Facilities-NRL, IMS, EADS, JPL
    Buchner, S.
    Roche, N.
    Warner, J.
    McMorrow, D.
    Miller, F.
    Morand, S.
    Pouget, V.
    Larue, C.
    Ferlet-Cavrois, V.
    El Mamouni, F.
    Kettunen, H.
    Adell, P.
    Allen, G.
    Aveline, D.
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2012, 59 (04) : 988 - 998
  • [8] CRITICAL-EVALUATION OF THE PULSED-LASER METHOD FOR SINGLE EVENT EFFECTS TESTING AND FUNDAMENTAL-STUDIES
    MELINGER, JS
    BUCHNER, S
    MCMORROW, D
    STAPOR, WJ
    WEATHERFORD, TR
    CAMPBELL, AB
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1994, 41 (06) : 2574 - 2584
  • [9] Pulsed-Laser Testing for Single Event Effects in a Stand-Alone Resistive Random Access Memory
    Xi Kai
    Zhang Feng
    Li Jin
    Ji Lanlong
    Fang Cong
    Liu Jing
    Liu Ming
    Bi Jinshun
    [J]. 2017 IEEE 24TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA), 2017,
  • [10] Effects of Metal Spacing and Poly-Silicon Layers on Pulsed-Laser Single Event Transient Testing
    Bi, Jinshun
    Zeng, Chuanbin
    Gao, Linchun
    Li, Duoli
    Liu, Gang
    Luo, Jiajun
    Han, Zhengsheng
    Han, Zhengshen
    [J]. 2014 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), 2014, : 207 - 212