Development of a test methodology for single-event transients (SETs) in linear devices

被引：15
|
作者：
Poivey, C [2 ]
Howard, JW
Buchner, S
LaBel, KA
Forney, JD
Kim, HS
Assad, A
机构：
[1] Jackson & Tull, Seabrook, MD 20706 USA
[2] SGT Inc, Greenbelt, MD 20771 USA
[3] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA
[4] SFA Inc, Largo, MD USA
[5] USN, Res Lab, Washington, DC 20375 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2001年 / 48卷 / 06期
关键词：
bipolar analog integrated circuits; comparators; integrated circuits; ion radiation effects; laser radiation effects; linear circuits; operational amplifiers; radiation effects;
D O I：
10.1109/23.983193
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present single-event transient (SET) test data on linear devices under many operational conditions in an attempt to understand the SET generation and characteristics. This is done in an attempt to define a low-cost conservative test methodology to characterize these effects.
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页码：2180 / 2186
页数：7
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