Development of a test methodology for single-event transients (SETs) in linear devices

被引：15
|
作者：
Poivey, C [2 ]
Howard, JW
Buchner, S
LaBel, KA
Forney, JD
Kim, HS
Assad, A
机构：
[1] Jackson & Tull, Seabrook, MD 20706 USA
[2] SGT Inc, Greenbelt, MD 20771 USA
[3] NASA, Goddard Space Flight Ctr, Greenbelt, MD 20771 USA
[4] SFA Inc, Largo, MD USA
[5] USN, Res Lab, Washington, DC 20375 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2001年 / 48卷 / 06期
关键词：
bipolar analog integrated circuits; comparators; integrated circuits; ion radiation effects; laser radiation effects; linear circuits; operational amplifiers; radiation effects;
D O I：
10.1109/23.983193
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present single-event transient (SET) test data on linear devices under many operational conditions in an attempt to understand the SET generation and characteristics. This is done in an attempt to define a low-cost conservative test methodology to characterize these effects.
引用
下载
收藏
页码：2180 / 2186
页数：7
相关论文
共 50 条
  • [21] SINGLE-EVENT CHARGE ENHANCEMENT IN SOI DEVICES
    MASSENGILL, LW
    KERNS, DV
    KERNS, SE
    ALLES, ML
    IEEE ELECTRON DEVICE LETTERS, 1990, 11 (02) : 98 - 99
  • [22] Influence of Supply Voltage and Body Biasing on Single-Event Upsets and Single-Event Transients in UTBB FD-SOI
    de Boissac, Capucine Lecat-Mathieu
    Abouzeid, Fady
    Malherbe, Victor
    Gasiot, Gilles
    Roche, Philippe
    Autran, Jean-Luc
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 68 (05) : 850 - 856
  • [23] Single-event effects in SOI technologies and devices
    Musseau, O
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1996, 43 (02) : 603 - 613
  • [24] INVESTIGATION FOR SINGLE-EVENT UPSET IN MSI DEVICES
    WOODS, JP
    NICHOLS, DK
    PRICE, WE
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) : 4022 - 4025
  • [25] An infrastructure for accurate characterization of single-event transients in digital circuits
    Veeravalli, Varadan Savulimedu
    Polzer, Thomas
    Schmid, Ulrich
    Steininger, Andreas
    Hofbauer, Michael
    Schweiger, Kurt
    Dietrich, Horst
    Schneider-Hornstein, Kerstin
    Zimmermann, Horst
    Voss, Kay-Obbe
    Merk, Bruno
    Hajek, Michael
    MICROPROCESSORS AND MICROSYSTEMS, 2013, 37 (08) : 772 - 791
  • [26] Investigation of single-event transients in voltage-controlled oscillators
    Chen, WJ
    Pouget, V
    Barnaby, HJ
    Cressler, JD
    Niu, GF
    Fouillat, P
    Deval, Y
    Lewis, D
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2003, 50 (06) : 2081 - 2087
  • [27] Examination of Trapping Effects on Single-Event Transients in GaN HEMTs
    Nelson, Tolen
    Georgiev, Daniel G.
    Hontz, Michael R.
    Khanna, Raghav
    Ildefonso, Adrian
    Koehler, Andrew D.
    Hobart, Karl
    Khachatrian, Ani
    McMorrow, Dale
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2023, 70 (04) : 328 - 335
  • [28] Single-event phenomena in GaAs devices and circuits
    McMorrow, D
    Weatherford, TR
    Buchner, S
    Knudson, AR
    Melinger, JS
    Tran, LH
    Campbell, AB
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1996, 43 (02) : 628 - 644
  • [29] Ionizing Radiation Effects Spectroscopy for Analysis of Single-Event Transients
    Loveless, T. D.
    Patel, B.
    Reising, D. R.
    Roca, R.
    Allen, M.
    Massengill, L. W.
    McMorrow, D.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 67 (01) : 99 - 107
  • [30] Investigation of single event transients on SiGe BiCMOS linear devices with pulsed laser
    An H.
    Zhang C.
    Yang S.
    Xue Y.
    Wang G.
    Wang J.
    Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2019, 48 (03):
12345