Single-event transients in voltage regulators

被引:20
|
作者
Johnston, A. H. [1 ]
Miyahira, T. F. [1 ]
Irom, F. [1 ]
Laird, J. S. [1 ]
机构
[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
关键词
radiation testing; single-event transient; voltage regulator;
D O I
10.1109/TNS.2006.886215
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Single-event transients are investigated for two voltage regulator circuits that are widely used in, space. A circuit-level model is developed that can be used to determine how transients are affected by different circuit application conditions. Internal protection circuits-which are affected by load as well as internal thermal effects-can also be triggered from heavy ions, causing dropouts or shutdown ranging from milliseconds to seconds. Although conventional output transients can be reduced by adding load capacitance, that approach is ineffective for dropouts from protection circuitry.
引用
收藏
页码:3455 / 3461
页数:7
相关论文
共 50 条
  • [1] Investigation of Single-Event Transients in Linear Voltage Regulators
    Irom, Farokh
    Miyahira, Tetsuo F.
    Adel, Philippe C.
    Laird, Jamie S.
    Conder, Brandon
    Pouget, Vincent
    Essely, Fabien
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2008, 55 (06) : 3352 - 3359
  • [2] Investigation of single-event transients in voltage-controlled oscillators
    Chen, WJ
    Pouget, V
    Barnaby, HJ
    Cressler, JD
    Niu, GF
    Fouillat, P
    Deval, Y
    Lewis, D
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2003, 50 (06) : 2081 - 2087
  • [3] Total dose and single event transients in linear voltage regulators
    Kelly, Andrew T.
    Adell, Philippe C.
    Witulski, Arthur R.
    Holman, W. Timothy
    Schrimpf, Ronald D.
    Pouget, Vincent
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2007, 54 (04) : 1327 - 1334
  • [4] Accurate Modeling of Single-Event Transients in a SiGe Voltage Reference Circuit
    Moen, Kurt A.
    Najafizadeh, Laleh
    Seungwoo, Jung
    Raman, Ashok
    Turowski, Marek
    Cressler, John D.
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2011, 58 (03) : 877 - 884
  • [5] Design of Voltage-Controlled Oscillator with Single-Event Transients Tolerance
    Wang, Xuan
    Liu, Jie
    Zhou, Guo Chang
    Lai, Xiao Ling
    Gong, Ke
    [J]. PROCEEDINGS OF 2019 IEEE 9TH INTERNATIONAL CONFERENCE ON ELECTRONICS INFORMATION AND EMERGENCY COMMUNICATION (ICEIEC 2019), 2019, : 416 - 420
  • [6] Influence of Supply Voltage and Body Biasing on Single-Event Upsets and Single-Event Transients in UTBB FD-SOI
    de Boissac, Capucine Lecat-Mathieu
    Abouzeid, Fady
    Malherbe, Victor
    Gasiot, Gilles
    Roche, Philippe
    Autran, Jean-Luc
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 68 (05) : 850 - 856
  • [7] Modeling and mitigating single-event transients in voltage-controlled oscillators
    Loveless, T. D.
    Massengill, L. W.
    Holman, W. T.
    Bhuva, B. L.
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2007, 54 (06) : 2561 - 2567
  • [8] A model for single-event transients in comparators
    Johnston, AH
    Swift, GM
    Miyahira, TF
    Edmonds, LD
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2000, 47 (06) : 2624 - 2633
  • [9] Analysis of single-event transients in analog circuits
    Adell, P
    Schrimpf, RD
    Barnaby, HJ
    Marec, R
    Chatry, C
    Calvel, P
    Barillot, C
    Mion, O
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2000, 47 (06) : 2616 - 2623
  • [10] A Bulk Built-In Voltage Sensor to Detect Physical Location of Single-Event Transients
    Zhichao Zhang
    Yi Ren
    Li Chen
    Nelson J. Gaspard
    Arthur. F. Witulski
    Timothy W. Holman
    Bharat L. Bhuva
    Shi-Jie Wen
    Ramaswami Sammynaiken
    [J]. Journal of Electronic Testing, 2013, 29 : 249 - 253