Properties of In0.52Al0.48As and In0.53Ga0.47As/In0.52Al0.48As quantum well structures grown on (111)B InP substrates by molecular beam epitaxy

In0.52Al0.48As and In0.53Ga0.47As/In0.52Al0.48As quantum well (QW) structures were grown on (111)B InP substrates by molecular beam epitaxy, and their optical and electrical properties were studied. The photoluminescence (PL) spectrum and electron mobility of the InAlAs layers grown on the (111)B InP substrates were found to have a remarkable dependence on. the V/III ratio and the growth temperature. It was found that the PL peak energy of the InGaAs/InAlAs QWs grown under optimized conditions on the (111)B MP substrates shows a remarkable red shift compared to that grown on the (100) InP substrates. An atomic force microscopy observation revealed that the observed red shift for the (111)B QW is induced by a large surface step-bunching.