Properties of In0.52Al0.48As and In0.53Ga0.47As/In0.52Al0.48As quantum well structures grown on (111)B InP substrates by molecular beam epitaxy

被引：3
|
作者：
Kawamura, Y
Kamada, A
Yoshimatsu, K
Nakao, M
Inoue, N
机构：
[1] Univ Osaka Prefecture, Adv Sci & Technol Res Inst, Osaka 5998570, Japan
[2] NTT, Optoelect Labs, Kanagawa 2430198, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 2B期
关键词：
D O I：
10.1143/JJAP.38.1044
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In0.52Al0.48As and In0.53Ga0.47As/In0.52Al0.48As quantum well (QW) structures were grown on (111)B InP substrates by molecular beam epitaxy, and their optical and electrical properties were studied. The photoluminescence (PL) spectrum and electron mobility of the InAlAs layers grown on the (111)B InP substrates were found to have a remarkable dependence on. the V/III ratio and the growth temperature. It was found that the PL peak energy of the InGaAs/InAlAs QWs grown under optimized conditions on the (111)B MP substrates shows a remarkable red shift compared to that grown on the (100) InP substrates. An atomic force microscopy observation revealed that the observed red shift for the (111)B QW is induced by a large surface step-bunching.
引用
收藏
页码：1044 / 1047
页数：4
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