Properties of In0.52Al0.48As and In0.53Ga0.47As/In0.52Al0.48As quantum well structures grown on (111)B InP substrates by molecular beam epitaxy

被引：3

作者：

Kawamura, Y

Kamada, A

Yoshimatsu, K

Nakao, M

Inoue, N

机构：

[1] Univ Osaka Prefecture, Adv Sci & Technol Res Inst, Osaka 5998570, Japan

[2] NTT, Optoelect Labs, Kanagawa 2430198, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 2B期

关键词：

D O I：

10.1143/JJAP.38.1044

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In0.52Al0.48As and In0.53Ga0.47As/In0.52Al0.48As quantum well (QW) structures were grown on (111)B InP substrates by molecular beam epitaxy, and their optical and electrical properties were studied. The photoluminescence (PL) spectrum and electron mobility of the InAlAs layers grown on the (111)B InP substrates were found to have a remarkable dependence on. the V/III ratio and the growth temperature. It was found that the PL peak energy of the InGaAs/InAlAs QWs grown under optimized conditions on the (111)B MP substrates shows a remarkable red shift compared to that grown on the (100) InP substrates. An atomic force microscopy observation revealed that the observed red shift for the (111)B QW is induced by a large surface step-bunching.

引用

页码：1044 / 1047

页数：4

共 50 条

[11] ELECTROABSORPTION IN IN0.53GA0.47AS/IN0.52AL0.48AS ASYMMETRIC COUPLED QUANTUM WELLS GROWN ON INP SUBSTRATES
LEAVITT, RP
LITTLE, JW
HORST, SC
PHYSICAL REVIEW B, 1989, 40 (06): : 4183 - 4186
[12] Multiple cations interdiffusion in In0.53Ga0.47As/In0.52Al0.48As quantum well
Chan, Y
Shiu, WC
Tsui, WK
Li, EH
INFRARED APPLICATIONS OF SEMICONDUCTORS - MATERIALS, PROCESSING AND DEVICES, 1997, 450 : 377 - 382
[13] Structural and electrophysical properties of In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well
Galiev, G. B.
Vasiliev, A. L.
Vasil'evskii, I. S.
Imamov, R. M.
Klimov, E. A.
Klochkov, A. N.
Lavruhin, D. V.
Maltsev, P. P.
Pushkarev, S. S.
Trunkin, I. N.
CRYSTALLOGRAPHY REPORTS, 2015, 60 (03) : 397 - 405
[14] MBE生长In0.52Al0.48AS/In0.53Ga0.47AS/InP材料
彭正夫
张允强
高翔
孙娟
吴鹏
固体电子学研究与进展, 1993, (03) : 248 - 248
[15] Structural Control of Rashba Spin–Orbit Coupling in In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As Quantum Wells
T. Koga
J. Nitta
S. Marcet
Journal of Superconductivity, 2003, 16 : 331 - 334
[16] Structural and electrophysical properties of In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well
G. B. Galiev
A. L. Vasiliev
I. S. Vasil’evskii
R. M. Imamov
E. A. Klimov
A. N. Klochkov
D. V. Lavruhin
P. P. Maltsev
S. S. Pushkarev
I. N. Trunkin
Crystallography Reports, 2015, 60 : 397 - 405
[17] Electron Transport in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As Quantum Well with a δ-Si Doped Barrier in High Electric Fields
Vasil'evskii, I. S.
Galiev, G. B.
Matveev, Yu. A.
Klimov, E. A.
Pozela, J.
Pozela, K.
Suziedelis, A.
Paskevic, C.
Juciene, V.
SEMICONDUCTORS, 2010, 44 (07) : 898 - 903
[18] Electron transport in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well with a δ-Si doped barrier in high electric fields
I. S. Vasil’evskii
G. B. Galiev
Yu. A. Matveev
E. A. Klimov
J. Požela
K. Požela
A. Sužiedėlis
Č. Paškevič
V. Jucienė
Semiconductors, 2010, 44 : 898 - 903
[19] Super-flat interfaces in In0.53Ga0.47As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy
Kitada, T
Saeki, T
Ohashi, M
Shimomura, S
Adachi, A
Okamoto, Y
Sano, N
Hiyamizu, S
JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (09) : 1043 - 1046
[20] Super-flat interfaces in In0.53Ga0.47As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy
Takahiro Kitada
Tatsuya Saeki
Masanobu Ohashi
Satoshi Shimomura
Akira Adachi
Yasunori Okamoto
Naokatsu Sano
Satoshi Hiyamizu
Journal of Electronic Materials, 1998, 27 : 1043 - 1046

← 1 2 3 4 5 →