IN0.52AL0.48AS/IN0.53GA0.47AS/IN0.52AL0.48AS ABRUPT DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：0
|
作者：
LEE, W [1 ]
FONSTAD, CG [1 ]
机构：
[1] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139
来源：
IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 12期
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：683 / 685
页数：3
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