Persistent photoconductivity and electron mobility in In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP quantum-well structures

被引：6
|
作者：
Kulbachinskii, V. A. [1 ]
Lunin, R. A. [1 ]
Yuzeeva, N. A. [1 ,3 ]
Vasilievskii, I. S. [2 ]
Galiev, G. B. [3 ]
Klimov, E. A. [3 ]
机构：
[1] Moscow MV Lomonosov State Univ, Dept Low Temp Phys & Superconduct, Moscow 119991, Russia
[2] Natl Res Nucl Univ MEPhI, Moscow 115409, Russia
[3] Russian Acad Sci, Inst Microwave Semicond Elect, Moscow 117105, Russia
来源：
SEMICONDUCTORS | 2013年 / 47卷 / 07期
关键词：
MILLIMETER-WAVE APPLICATIONS; TRANSISTOR; INGAAS; GROWTH; SEMICONDUCTORS; DESIGN; LAYERS; HEMTS; GAAS;
D O I：
10.1134/S1063782613070130
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The influence of the width of the quantum well L and doping on the band structure, scattering, and electron mobility in nanoheterostructures with an isomorphic In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well grown on an InP substrate are investigated. The quantum and transport mobilities of electrons in the dimensionally quantized subbands are determined using Shubnikov-de Haas effect measurements. These mobilities are also calculated for the case of ionized-impurity scattering taking into account intersub-band electron transitions. It is shown that ionized-impurity scattering is the dominant mechanism of electron scattering. At temperatures T < 170 K, persistent photoconductivity is observed, which is explained by the spatial separation of photoexcited charge carriers.
引用
收藏
页码：935 / 942
页数：8
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