Electron heating measurements in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterostructure system

被引:3
|
作者
Prasad, C [1 ]
Ferry, DK
Vasileska, D
Wieder, HH
机构
[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
[2] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA
[3] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
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关键词
D O I
10.1116/1.1588644
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Electron heating experiments are carried out on a two-dimensional electron gas fabricated in an In0.52Al0.48As/In0.53Ga0.47As/ln(0.52)Al(0.48)As heterostructure and the energy loss rates and energy relaxation times are extracted from the Shubnikov-de Haas oscillations to get a better understanding of the electron-phonon interaction in these heterostructures. The exponent of the energy loss rate dependence is used to indicate a dominant unscreened piezoelectric coupling in the temperature range of 4.2-30 K. Simulations of the quantum well band structure verify the presence of two populated subbands in this heterostructure system. The energy relaxation time is observed to be on the order of several tens of nanoseconds and its decay with temperature shows a T-3 behavior at higher temperatures and a T-1 behavior at lower temperatures. (C) 2003 American Vacuum Society.
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页码:1936 / 1939
页数:4
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