TIME-OF-FLIGHT MEASUREMENT OF ELECTRON VELOCITY IN AN IN0.52AL0.48AS/IN0.53GA0.47AS/IN0.52AL0.48AS DOUBLE HETEROSTRUCTURE

被引：38
|
作者：
SHIGEKAWA, N
FURUTA, T
ARAI, K
机构：
[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa 243-01, 3-1, Morinosato-Wakamiya
来源：
APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 01期
关键词：
D O I：
10.1063/1.103580
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electron velocity versus electric field (v-E) relationship was measured between 0 and 12 kV/cm at room temperature for a selectively Be-doped In 0.52Al0.48As/In0.53Ga0.47As /In 0.52Al0.48As double heterostructure. It was found that the observed electron velocity is greater than that previously measured for an AlGaAs/GaAs/AlGaAs double heterostructure over the enitre range of field investigated. This indicates the superiority of In0.53Ga 0.47As as a material for high-speed semiconductor devices. The experimental results were also compared with those of the Monte Carlo calculation, and a remarkable discrepancy between the experiment and the calculation was found above the threshold field.
引用
收藏
页码：67 / 69
页数：3
相关论文
共 50 条
  • [1] Electron heating measurements in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterostructure system
    Prasad, C
    Ferry, DK
    Vasileska, D
    Wieder, HH
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (04): : 1936 - 1939
  • [2] HIGH-FIELD ELECTRON-TRANSPORT PROPERTIES IN AN IN0.52AL0.48AS/IN0.53GA0.47AS/IN0.52AL0.48AS DOUBLE HETEROSTRUCTURE
    SHIGEKAWA, N
    FURUTA, T
    ARAI, K
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (07) : 4003 - 4010
  • [3] IN0.52AL0.48AS/IN0.53GA0.47AS/IN0.52AL0.48AS ABRUPT DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS
    LEE, W
    FONSTAD, CG
    [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) : 683 - 685
  • [4] Electron-phonon interaction studies in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well structure
    Prasad, C
    Ferry, DK
    Vasileska, D
    Wieder, HH
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 19 (1-2): : 215 - 220
  • [5] Electron Mobility and Persistent Photoconductivity in Quantum Wells In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As on InP Substrate
    Kulbachinskii, Vladimir A.
    Lunin, Roman A.
    Yuzeeva, Natalia A.
    Galiev, Galib B.
    Vasilievskii, Ivan S.
    Klimov, Eugene A.
    [J]. ADVANCES IN NANODEVICES AND NANOFABRICATION, 2012, : 273 - 282
  • [6] Enhancement of Electron Mobility and Photoconductivity in Quantum Well In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As on InP Substrate
    Kulbachinskii, V. A.
    Lunin, R. A.
    Yuzeeva, N. A.
    Galiev, G. B.
    Vasilievskii, I. S.
    Klimov, E. A.
    [J]. ACTA PHYSICA POLONICA A, 2013, 123 (02) : 345 - 348
  • [7] Persistent photoconductivity and electron mobility in In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP quantum-well structures
    Kulbachinskii, V. A.
    Lunin, R. A.
    Yuzeeva, N. A.
    Vasilievskii, I. S.
    Galiev, G. B.
    Klimov, E. A.
    [J]. SEMICONDUCTORS, 2013, 47 (07) : 935 - 942
  • [8] Persistent photoconductivity and electron mobility in In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP quantum-well structures
    V. A. Kulbachinskii
    R. A. Lunin
    N. A. Yuzeeva
    I. S. Vasilievskii
    G. B. Galiev
    E. A. Klimov
    [J]. Semiconductors, 2013, 47 : 935 - 942
  • [9] Structural Control of Rashba Spin–Orbit Coupling in In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As Quantum Wells
    T. Koga
    J. Nitta
    S. Marcet
    [J]. Journal of Superconductivity, 2003, 16 : 331 - 334
  • [10] Electron Transport in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As Quantum Well with a δ-Si Doped Barrier in High Electric Fields
    Vasil'evskii, I. S.
    Galiev, G. B.
    Matveev, Yu. A.
    Klimov, E. A.
    Pozela, J.
    Pozela, K.
    Suziedelis, A.
    Paskevic, C.
    Juciene, V.
    [J]. SEMICONDUCTORS, 2010, 44 (07) : 898 - 903
12345