TIME-OF-FLIGHT MEASUREMENT OF ELECTRON VELOCITY IN AN IN0.52AL0.48AS/IN0.53GA0.47AS/IN0.52AL0.48AS DOUBLE HETEROSTRUCTURE

被引：38
|
作者：
SHIGEKAWA, N
FURUTA, T
ARAI, K
机构：
[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa 243-01, 3-1, Morinosato-Wakamiya
来源：
APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 01期
关键词：
D O I：
10.1063/1.103580
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electron velocity versus electric field (v-E) relationship was measured between 0 and 12 kV/cm at room temperature for a selectively Be-doped In 0.52Al0.48As/In0.53Ga0.47As /In 0.52Al0.48As double heterostructure. It was found that the observed electron velocity is greater than that previously measured for an AlGaAs/GaAs/AlGaAs double heterostructure over the enitre range of field investigated. This indicates the superiority of In0.53Ga 0.47As as a material for high-speed semiconductor devices. The experimental results were also compared with those of the Monte Carlo calculation, and a remarkable discrepancy between the experiment and the calculation was found above the threshold field.
引用
收藏
页码：67 / 69
页数：3
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