TIME-OF-FLIGHT MEASUREMENT OF ELECTRON VELOCITY IN AN IN0.52AL0.48AS/IN0.53GA0.47AS/IN0.52AL0.48AS DOUBLE HETEROSTRUCTURE

被引：38

作者：

SHIGEKAWA, N

FURUTA, T

ARAI, K

机构：

[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa 243-01, 3-1, Morinosato-Wakamiya

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 01期

关键词：

D O I：

10.1063/1.103580

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electron velocity versus electric field (v-E) relationship was measured between 0 and 12 kV/cm at room temperature for a selectively Be-doped In 0.52Al0.48As/In0.53Ga0.47As /In 0.52Al0.48As double heterostructure. It was found that the observed electron velocity is greater than that previously measured for an AlGaAs/GaAs/AlGaAs double heterostructure over the enitre range of field investigated. This indicates the superiority of In0.53Ga 0.47As as a material for high-speed semiconductor devices. The experimental results were also compared with those of the Monte Carlo calculation, and a remarkable discrepancy between the experiment and the calculation was found above the threshold field.

引用

页码：67 / 69

页数：3

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