HIGH-FIELD ELECTRON-TRANSPORT PROPERTIES IN AN IN0.52AL0.48AS/IN0.53GA0.47AS/IN0.52AL0.48AS DOUBLE HETEROSTRUCTURE

被引：10
|
作者：
SHIGEKAWA, N
FURUTA, T
ARAI, K
机构：
[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa, 243-01, 3-1, Morinosato-Wakamiya
来源：
JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 07期
关键词：
D O I：
10.1063/1.348461
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Effects of the parameters characterizing the electron-transport properties in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As double heterostructure are theoretically investigated using the Monte Carlo approach. The calculated results are compared with the previously measured electron velocity versus electric-field relationship for the investigated structure. It is found that the effects of the GAMMA-valley nonparabolicity factor and the intervalley energy separations in In0.53Ga0.47As are the most remarkable within the investigated parameters.
引用
收藏
页码：4003 / 4010
页数：8
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