Gate-all-around MOSFETs:: lateral ultra-narrow (≤10nm) fin as channel body

被引：6
|
作者：
Singh, N [1 ]
Agarwal, A [1 ]
Bera, LK [1 ]
Kumar, R [1 ]
Lo, GQ [1 ]
Narayanan, B [1 ]
Kwong, DL [1 ]
机构：
[1] Inst Microelect, Singapore 117685, Singapore
来源：
ELECTRONICS LETTERS | 2005年 / 41卷 / 24期
关键词：
D O I：
10.1049/el:20053195
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The fabrication of lateral ultra-narrow fin body (thickness <= 10 nm) gate-all-around MOSFETs. which exhibit excellent gate electrostatic control over the channel. is presented. The narrow fins were formed using alternating phase DUV lithography and low temperature oxidation of Si. The device characteristics are completely free from substrate bias effects.
引用
收藏
页码：1353 / 1354
页数：2
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