Impact of annealing induced structural relaxation on the electrical properties and the crystallization kinetics of amorphous GeTe films

被引：5
|
作者：
Privitera, S. [1 ]
Mio, A. M. [1 ]
D'Arrigo, G. [1 ]
Carria, E. [2 ]
Rimini, E. [1 ]
机构：
[1] CNR, IMM, I-95121 Catania, Italy
[2] Univ Catania, Dept Phys & Astron, I-95123 Catania, Italy
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 07期
关键词：
RESISTANCE DRIFT;
D O I：
10.1063/1.4818520
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electrical properties of amorphous GeTe films deposited at room temperature, ion implanted, and melt-quenched have been studied. The activation energy for the mobility gap varies from 0.64, in the melt-quenched, to 0.74 eV, in the as deposited film. In all the types of amorphous, pre-annealing at temperatures below crystallization induces relaxation, increasing the resistance and the mobility gap. Pre-annealing also reduces the nucleation rate for crystallization by a factor up to 4. A model is proposed, describing the competing processes of structural relaxation and crystallization, as governed by a population of sub-critical nuclei formed by medium range ordered regions. (C) 2013 AIP Publishing LLC.
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页数：4
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