Impact of annealing induced structural relaxation on the electrical properties and the crystallization kinetics of amorphous GeTe films

被引：5
|
作者：
Privitera, S. [1 ]
Mio, A. M. [1 ]
D'Arrigo, G. [1 ]
Carria, E. [2 ]
Rimini, E. [1 ]
机构：
[1] CNR, IMM, I-95121 Catania, Italy
[2] Univ Catania, Dept Phys & Astron, I-95123 Catania, Italy
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 07期
关键词：
RESISTANCE DRIFT;
D O I：
10.1063/1.4818520
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electrical properties of amorphous GeTe films deposited at room temperature, ion implanted, and melt-quenched have been studied. The activation energy for the mobility gap varies from 0.64, in the melt-quenched, to 0.74 eV, in the as deposited film. In all the types of amorphous, pre-annealing at temperatures below crystallization induces relaxation, increasing the resistance and the mobility gap. Pre-annealing also reduces the nucleation rate for crystallization by a factor up to 4. A model is proposed, describing the competing processes of structural relaxation and crystallization, as governed by a population of sub-critical nuclei formed by medium range ordered regions. (C) 2013 AIP Publishing LLC.
引用
收藏
页数：4
相关论文
共 50 条
  • [21] Effects of RF power and annealing on the electrical and structural properties of sputtered amorphous silicon carbide films
    Choi, WK
    Chong, NB
    Tan, LS
    Han, LJ
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 72 (2-3): : 132 - 134
  • [22] Influence of annealing temperature on the structural, optical and electrical properties of amorphous Zinc Sulfide thin films
    Gode, F.
    Guneri, E.
    Kariper, A.
    Ulutas, C.
    Kirmizigul, F.
    Gumus, C.
    17TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS 2011, 2011, 326
  • [23] ELECTRICAL-PROPERTIES OF GETE FILMS
    VASILKOVA, OG
    LEBEDEVA, VE
    KONSTANTINOV, PP
    LEV, EY
    SYSOEVA, LM
    INORGANIC MATERIALS, 1976, 12 (06) : 838 - 841
  • [24] Crystallization of amorphous Ge films induced by semiconductor diode laser annealing
    Sakaike, K.
    Higashi, S.
    Murakami, H.
    Miyazaki, S.
    THIN SOLID FILMS, 2008, 516 (11) : 3595 - 3600
  • [25] The effect of annealing on electrical properties of fluorinated amorphous carbon films
    Wu, Zhenyu
    Yang, Yintang
    Wang, Hayou
    DIAMOND AND RELATED MATERIALS, 2008, 17 (02) : 118 - 122
  • [26] THE ELECTRICAL PROPERTIES OF AMORPHOUS FILMS OF TELLURIUM AND THE EFFECT OF ADDITIONS ON THEIR CRYSTALLIZATION
    SHIHTUAN, Y
    REGEL, AR
    SOVIET PHYSICS-SOLID STATE, 1962, 3 (12): : 2627 - 2631
  • [27] AMORPHOUS VERSUS CRYSTALLINE GETE FILMS .3. ELECTRICAL PROPERTIES AND BAND STRUCTURE
    BAHL, SK
    CHOPRA, KL
    JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) : 2196 - &
  • [28] Shifting of the thermal properties of amorphous germanium films upon relaxation and crystallization
    Szyszko, W., 1600, Springer-Verlag GmbH & Company KG, Berlin, Germany (61):
  • [29] CRYSTALLIZATION KINETICS OF AMORPHOUS NISIX FILMS
    THOMPSON, RD
    ANGILELLO, J
    TU, KN
    THIN SOLID FILMS, 1990, 188 (02) : 259 - 265
  • [30] Crystallization kinetics of amorphous ferroelectric films
    Ural State Univ, Ekaterinburg, Russia
    Ferroelectrics, 1-4 (183-186):
12345