Study of electrical properties and the crystallization kinetics of amorphous a-Ge30-x SbxS70 films

被引：0
|
作者：
Farag, ESM [1 ]
机构：
[1] Menoufia Univ, Fac Engn, Dept Basic Sci Engn, Shibin Al Kawm, Egypt
来源：
INDIAN JOURNAL OF PHYSICS | 2006年 / 80卷 / 04期
关键词：
conductivity; crystallization; kinetics; amorphous; thin films;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Amorphous Ge30-xSbxS70 films have been prepared by thermal evaporation technique and electrical conductivity has been measured in the temperature range of 300-400K. The temperature dependence of the electrical conductivity for all compositions has been recorded and discussed. The change in the electrical conductivity with time was also recorded at different temperatures during the amorphous-crystalline transition. The kinetic parameters determined have made it possible to discuss the growth of the crystals in two or three dimensions.
引用
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页码：367 / 371
页数：5
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