KINETICS OF LASER-INDUCED CRYSTALLIZATION OF AMORPHOUS GERMANIUM FILMS.

被引：0
|
作者：
Bostanjoglo, O. [1 ]
Endruschat, E. [1 ]
机构：
[1] Technische Univ Berlin, Optisches, Inst, Berlin, West Ger, Technische Univ Berlin, Optisches Inst, Berlin, West Ger
来源：
Physica Status Solidi (A) Applied Research | 1985年 / 91卷 / 01期
关键词：
CRYSTALS - Laser Applications - SEMICONDUCTING FILMS - Amorphous;
D O I：
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摘要：
The kinetics of laser pulse-induced crystallization of amorphous Ge films are investigated by time-resolved transmission electron microscopy. Crystallization starts above a threshold energy of approximately equals 4 mu J with a delay of approximately equals 10 ns, decreasing with increasing energy, after the laser pulse and proceeds by spherulitic growth - in 'explosive' films - with approximately equals m/s at the centre and by growth of plates with approximately equals 20 m/s at the edge of the irradiated area. Delays and velocities of crystallization are interpreted with a kinetic model based on nucleation growth and crystallization of a supercooled liquid in a superheated amorphous solid.
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页码：17 / 28
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